Next generation memory technologies
include emerging memory solutions that have been introduced in the
market in the recent past or are expected to be launched during the
period 2013 to 2019. These memories compete with older memories such as
flash, DRAM and SRAM on the basis of speed, scalability and cost. The
total global market for next generation memory technologies stood at USD
207.8 million in 2012 and is estimated to grow at a CAGR of 46.1%
during the period 2013 to 2019. Emerging memory solutions are
experiencing growth in demand due to their potential for better speed
and higher scalability.
The market has witnessed significant
uptake for non-volatile emerging memory solutions as compared to
volatile memory solutions. This is due to an inherent benefit offered by
non-volatile memories: retention of data without the need of power.
Among all non-volatile emerging memory solutions, FeRAM (ferroelectric
RAM), MRAM (magneto-resistive RAM) and PCM (phase change memory) had
significant market shares in 2012. Other emerging memory technologies
include ReRAM (resistive RAM) and CBRAM (conductive bridging RAM). With
increase in adoption of MRAM and PCM memory, cache memory and enterprise
storage is anticipated to be the largest market segment by application
for next generation memory technologies. Use of emerging memories is
expected to improve the input/output (I/O) performance of the enterprise
storage systems.
Major interface technologies being
deployed across the memory market include double data rate (DDR)
interface, SATA (Serial ATA), SAS (serial attached small computer system
interface), PCIe (peripheral component interconnect express) and I2C
(inter integrated circuit). DDR interface includes DDR 1/2/3/4 and
LPDDR. DDR interfaces find application in storage, especially SSDs
(solid-state drives). DDR was the dominant interface technology being
deployed with next generation memory technologies and held 47.6% share
in 2012. North America was the largest market in 2012, followed by
Europe. Rise in demand for memory technologies offering lower cost per
bit and demand for faster mobile memory chips are important trends in
the North American region. Europe experienced growth in next generation
memory technologies due to increasing volatility in the market and
decline in average selling prices for existing memories. This has led to
a rise in interest in more sustainable memory options. Growth in the
Asia Pacific region is led by demand from Japan, China and South Korea.
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Fujitsu Ltd. was the market leader in
2012 due to higher sales of its FeRAM technology, which is a relatively
mature product. Fujitsu was followed by Everspin Technologies, Inc. and
Micron Technology, Inc. In 2012, Everspin was a major manufacturer of
MRAM, while Micron Technology led the market for PCM. Other important
players include SK Hynix Inc., Avalanche Technology Inc., Cypress
Semiconductor Corporation, Adesto Technologies Corporation Inc., Samsung
Electronics Co., Ltd., Crossbar Inc., Winbond Electronics Corporation.
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